absolute maximum ratings parameter units i d @ v gs = 0v, t c = 25c continuous drain current -18 i d @ v gs = 0v, t c = 100c continuous drain current -11 i dm pulsed drain current -72 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current -18 a e ar repetitive avalanche energy 12.5 mj dv/dt peak diode recovery dv/dt a -5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 11.5(typical) g pd - 93976 the hexfet technology is the key to international rectifiers advanced line of power mosfet transistors. the efficient geometry and unique processing of this latest state of the art design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. the hexfet transistors also feature all of the well estab- lished advantages of mosfets such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. o c a repetitive avalanche and dv/dt rated IRF9140 hexfet transistors 100v, p-channel thru-hole (to-204aa/ae) 9/11/00 www.irf.com 1 to-3 product summary part number bvdss r ds(on) i d IRF9140 -100v 0.2 w -18a features: n repetitive avalanche ratings n dynamic dv/dt rating n hermetically sealed n simple drive requirements n ease of paralleling for footnotes refer to the last page
IRF9140 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.0 r thja junction-to-ambient 30 soldered to a 2 square copper-clad board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) -18 i sm pulse source current (body diode) -72 v sd diode forward voltage -4.2 v t j = 25c, i s =-18a, v gs = 0v ? t rr reverse recovery time 170 280 ns t j = 25c, i f = -18a, di/dt -100a/ m s q rr reverse recovery charge 3.6 c v dd -50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma d bv dss / d t j temperature coefficient of breakdown -0.087 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.2 v gs = -10v, i d = -11a ? resistance 0.23 v gs =-10v, i d = -18a ? v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -250 m a g fs forward transconductance 6.2 s ( ) v ds > -15v, i ds = -11a ? i dss zero gate voltage drain current -25 v ds = -80v, v gs =0v -250 a v ds = -80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 n a v gs = 20v q g total gate charge 31 60 v gs =-10v, id = -18a q gs gate-to-source charge 3.7 13 nc v ds = -50v q gd gate-to-drain (miller) charge 7.0 35.2 t d (on) turn-on delay time 35 v dd = -50v, i d = -18a, t r rise time 85 r g =9.1 w t d (off) turn-off delay time 85 t f fall time 65 l s + l d total inductance 6.8 c iss input capacitance 1400 v gs = 0v, v ds = -25v c oss output capacitance 600 pf f = 1.0mhz c rss reverse transfer capacitance 200 w nh ns w measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 IRF9140 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
IRF9140 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 13 a& b
www.irf.com 5 IRF9140 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f
IRF9140 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - -10v -12v
www.irf.com 7 IRF9140 foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 9/00 a i sd -18a, di/dt -100a/ m s, v dd -100v, t j 150c suggested rg =9.1 w repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, peak i l = -18a, case outline and dimensions to-204aa (modified to-3) ? pulse width 300 m s; duty cycle 2%
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